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1

Back-scattering study of heavy-ion distribution in semiconductors

Seijiro Furukawa, Hideki Matsumura, Hiroshi Ishiwara

Journal:

Thin Solid Films

Year:

1973

Language:

english

File:

PDF, 362 KB

english, 1973

2

Investigation on solid phase epitaxy and its application

Seijiro Furukawa

Journal:

Microelectronic Engineering

Year:

1984

Language:

english

File:

PDF, 398 KB

english, 1984

3

Precision Microwave Admittance Measurements of Active Elements

Furukawa, Seijiro, Aoyagi, Susumu

Journal:

IEEE Transactions on Instrumentation and Measurement

Year:

1968

Language:

english

File:

PDF, 2.11 MB

english, 1968

4

Theoretical Considerations on Lateral Spread of Implanted Ions

Furukawa, Seijiro, Matsumura, Hideki, Ishiwara, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1972

File:

PDF, 1.14 MB

1972

5

Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 596 KB

english, 1989

6

Crystallinity of heteroepitaxial GaAs layers grown on (Ca, Sr)F2/CaF2/Si(100) structures by molecular beam epitaxy

Tetsuroh Minemura, Junko Asano, Kazuo Tsutsui, Seijiro Furukawa

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 767 KB

english, 1991

7

A structure modeling of metal-silicide layers by using axial and planar channeling techniques

Hiroshi Ishiwara, Masao Nagatomo, Seijiro Furukawa

Journal:

Nuclear Instruments and Methods

Year:

1978

Language:

english

File:

PDF, 369 KB

english, 1978

8

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 53 KB

english, 1986

9

Low temperature annealing of B and P ions incorporated into deposited- and self-implanted amorphous Si

Hiroshi Ishiwara, Kiyomi Naruke, Seijiro Furukawa

Journal:

Nuclear Instruments and Methods in Physics Research

Year:

1983

Language:

english

File:

PDF, 338 KB

english, 1983

10

Control of rotational twins in a SOI-GaAs film grown on surface modified fluoride/Si(111)

Atsuki Ono, Kazuo Tsutsui, Seijiro Furukawa

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 199 KB

english, 1992

11

Mechanism of impurity diffusion in a-Si:H and diffusion blocking by fluorine inclusion

Hideki Matsumura, Kunihiro Sakai, Masaaki Maeda, Seijiro Furukawa

Journal:

Year:

1983

Language:

english

File:

PDF, 228 KB

english, 1983

12

Heteroepitaxial growth of (Ca,Sr)F2 on Si(100) substrates by molecular beam epitaxy

Minemura, Tetsuroh, Asano, Junko, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 286 KB

english, 1990

13

Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si Structures

Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 2.83 MB

1988

14

Effect of Substrate Off-Orientation on GaAs/CaF2/Si(111) Structure with Rotational Twin

Mizukami, Hiroyuki, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1991

File:

PDF, 1.83 MB

1991

15

Contactless measurement of sheet conductivity and mobility of semiconductor wafer by using eddy curent

Fumio Horiguchi, Seijiro Furukawas, Toshihiro Sugii

Journal:

Electronics and Communications in Japan (Part I: Communications))

Year:

1980

Language:

english

File:

PDF, 753 KB

english, 1980

16

Performance of millimeter-wave detector using hot carriers in semiconductor

Kazuo Kikuchi, Seijiro Furukawa

Journal:

Electronics and Communications in Japan (Part I: Communications))

Year:

1981

Language:

english

File:

PDF, 593 KB

english, 1981

17

Basic study on Si-HBT using plasma-deposited μc-Si for heteroemitter

Kimihiro Sasaki, Takeshi Fukazawa, Seijiro Furukawa

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1990

Language:

english

File:

PDF, 561 KB

english, 1990

18

Estimation of strain under electrodes of semiconductor devices with the mobility change using magneto-TLM measurement

Kouji Nakahara, Seijiro Furukawa

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1990

Language:

english

File:

PDF, 651 KB

english, 1990

19

Improvement of thermal stability of boron in SiGeB/Si heterostructure by stress compensation

Junichi Sakano, Seijiro Furukawa

Journal:

Electronics and Communications in Japan (Part II: Electronics))

Year:

1994

Language:

english

File:

PDF, 661 KB

english, 1994

20

Ion-irradiation-enhanced dissolution of epitaxial fluoride films: A new class of inorganic single-crystal ion resist

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1989

Language:

english

File:

PDF, 262 KB

english, 1989

21

Formation of a high-crystalline-quality SiGeB layer by Ge and B co-implantation

Ohta Ken, Sakano Junichi, Furukawa Seijiro

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

1991

Language:

english

File:

PDF, 312 KB

english, 1991

22

A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2

Hideki Matsumura, Seijiro Furukawa

Journal:

Journal of Non-Crystalline Solids

Year:

1983

Language:

english

File:

PDF, 170 KB

english, 1983

23

Study on impurity diffusion in the glow-discharged hydrogenated amorphous silicon

Hideki Matsumura, Masaaki Maeda, Seijiro Furukawa

Journal:

Journal of Non-Crystalline Solids

Year:

1983

Language:

english

File:

PDF, 178 KB

english, 1983

24

Characterization of epitaxial metal silicide films grown on silicon

Hiroshi Ishiwara, Kohki Hikosaka, Masao Nagatomo, Seijiro Furukawa

Journal:

Surface Science

Year:

1979

Language:

english

File:

PDF, 357 KB

english, 1979

25

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Journal:

Surface Science

Year:

1986

Language:

english

File:

PDF, 352 KB

english, 1986

26

Study on Efficiency of Piezoelectric Semiconductor SAW Convolver

Matsumoto, Shigetaka, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 1.48 MB

1977

27

Properties of Excited Surface-Wave Domains in CdS

Matsumoto, Shigetaka, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1976

File:

PDF, 976 KB

1976

28

Study on Saturation Power in SAW Amplifiers

Tsuchiya, Chikara, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 1.14 MB

1977

29

Formation of Uniform Solid-Phase Epitaxial CoSi 2 Films by Patterning Method

Ishibashi, Kouichirou, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1985

File:

PDF, 1.62 MB

1985

30

Channeling and backscattering studies of the crystalline perfection and the thermal stability of epitaxial PtSi films on Si

Ishiwara, Hiroshi, Hikosaka, Kohki, Furukawa, Seijiro

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 577 KB

english, 1979

31

A heat-resisting new amorphous silicon

Matsumura, Hideki, Nakagome, Yoshinobu, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 405 KB

english, 1980

32

Excitation of surface-wave acoustoelectric domains triggered by external signal

Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1974

Language:

english

File:

PDF, 392 KB

english, 1974

33

TWO KINDS OF CdS HIGH-FIELD DOMAIN MODES

Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1970

Language:

english

File:

PDF, 422 KB

english, 1970

34

Surface modification of CaF2 on Si(111) by low-energy electron beam for over growth of GaAs films

Izumi, Akira, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 771 KB

english, 1994

35

A novel heteroepitaxy method of Ge films on CaF2 by electron beam exposure

Kanemaru, Seigo, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 917 KB

english, 1988

36

Backscattering study on lateral spread of implanted ions

Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1973

Language:

english

File:

PDF, 273 KB

english, 1973

37

Double heteroepitaxy in the Si (111)/CoSi2/Si structure

Saitoh, Shyuichi, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1980

Language:

english

File:

PDF, 434 KB

english, 1980

38

Epitaxial relations in CaxSr1−xF2 films grown on GaAs {111} and Ge(111) substrates

Tsutsui, Kazuo, Ishiwara, Hiroshi, Asano, Tanemasa, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 472 KB

english, 1985

39

Channeling studies of radiation damage in metal-silicides

Ishiwara, Hiroshi, Hikosaka, Kohki, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1978

Language:

english

File:

PDF, 345 KB

english, 1978

40

Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

Tsutsui, Kazuo, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 441 KB

english, 1986

41

Lateral solid phase epitaxy of amorphous Si films onto nonplanar SiO2 patterns on Si substrates

Ishiwara, Hiroshi, Tamba, Akihiro, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1986

Language:

english

File:

PDF, 366 KB

english, 1986

42

Resistivity control of sputtered amorphous-silicon by ion-implantation

Matsumura, Hideki, Kuzuta, Nobuyuki, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Radiation Effects

Year:

1980

Language:

english

File:

PDF, 354 KB

english, 1980

43

Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms

Dan, Toru, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1988

Language:

english

File:

PDF, 547 KB

english, 1988

44

Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering technique

Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 496 KB

english, 1976

45

Influence of off-oriented substrates on the crystallinity of (Ca,Sr)F2 layers grown on Si (100)

Minemura, Tetsuroh, Asano, Junko, Tsutsui, Kazuo, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1990

Language:

english

File:

PDF, 609 KB

english, 1990

46

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

Yamamoto, Hiroshi, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Applied Physics Letters

Year:

1985

Language:

english

File:

PDF, 534 KB

english, 1985

47

Simple formulation for energy straggling of helium in silicon

Matsumura, Hideki, Furukawa, Seijiro

Journal:

Radiation Effects

Year:

1976

Language:

english

File:

PDF, 158 KB

english, 1976

48

Contactless Measurement of Semiconductor Mobility, Conductivity and Carrier Concentration

Horiguchi, Fumio, Matsumura, Hideki, Furukawa, Seijiro, Ishiwara, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 955 KB

1979

49

Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF 2 /Si Structures

Lee, Hee Chul, Asano, Tanemasa, Ishiwara, Hiroshi, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 557 KB

1986

50

A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures

Lee, Hee Chul, Ishiwara, Hiroshi, Kanemaru, Seigo, Furukawa, Seijiro

Journal:

Japanese Journal of Applied Physics

Year:

1987

File:

PDF, 822 KB

1987